A quantitative theory of current-induced step bunching on Si(111)
Da-Jiang Liu, John D. Weeks

TL;DR
This paper presents a quantitative model of current-induced step bunching on Si(111), combining step dynamics, analytical solutions, and Monte Carlo simulations to match experimental observations and reveal new instabilities.
Contribution
It introduces a comprehensive one-dimensional step model with experimental parameter calibration and extends it with Monte Carlo simulations to better understand and predict step bunching phenomena.
Findings
Force in the step down direction causes step bunching.
Step bunch size grows as t^0.5, matching experiments.
Monte Carlo simulations improve agreement with experimental results.
Abstract
We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the assumption that there is local mass transport through surface diffusion and that step motion is limited by the attachment rate of adatoms to step edges. The direct heating current is treated as an external driving force acting on each adatom. Numerical calculations show both qualitative and quantitative agreement with experiment. A force in the step down direction will destabilize the uniform step train towards step bunching. The average size of the step bunches grows with electromigration time as t^beta, with beta = 0.5, in agreement with experiment and with an analytical treatment of the steady states. The model is extended to include the effect of direct…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Force Microscopy Techniques and Applications · Semiconductor materials and devices
