Phase Relaxation of Electrons in Disordered Conductors
B.L. Altshuler, M.E. Gershenson, and I.L. Aleiner

TL;DR
This paper reviews the phase relaxation of electrons in disordered conductors, emphasizing the dephasing rate's physical meaning, its temperature dependence, and recent experimental findings on magnetoresistance and dephasing mechanisms.
Contribution
It provides a comprehensive review of electron phase relaxation, including theoretical and experimental insights, and discusses the effects of external noise and microwave fields on dephasing.
Findings
Dephasing rate is mainly governed by electron-electron collisions at low temperatures.
Some experiments show saturation of dephasing time at low temperatures, others do not.
External noise and microwave fields can influence electron phase coherence.
Abstract
Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time can be orders of magnitude longer than the momentum relaxation time. The large difference in these time scales gives rise to well known effects of weak localization, such as anomalous magnetoresistance. Among other interesting characteristics, study of these effects provide quantitative information on the dephasing rate . This parameter is of fundamental interest: the relation between and the temperature (a typical energy scale of an electron) determines how well a single electron state is defined. We will discuss the basic physical meaning of in different situations and its difference from the energy relaxation rate. At low temperatures, the phase relaxation rate…
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