Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires

TL;DR

This study investigates how domain walls influence electron transport in microfabricated Fe wires, revealing a negative contribution to resistivity, which challenges conventional understanding and aligns with recent quantum transport theories.

Contribution

It provides experimental evidence of negative domain wall contribution to resistivity in Fe wires, advancing understanding of domain wall effects on quantum transport.

Findings

Negative domain wall contribution to resistivity observed.

Resistivity affected by domain wall density and temperature.

Results align with recent quantum transport theories.

Abstract

The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.