Theoretical analysis of the resistively-coupled single-electron transistor

TL;DR

This paper provides a quantitative theoretical analysis of resistively-coupled single-electron transistors, highlighting how Nyquist noise impacts their performance at very low temperatures and limits voltage gain at slightly higher temperatures.

Contribution

It offers a detailed theoretical understanding of how Nyquist noise affects R-SET performance, which was not previously quantified.

Findings

Performance degradation due to Nyquist noise at very low temperatures

Voltage gain becomes impossible at temperatures above 10^{-2}e^2/C

Quantitative analysis of temperature-dependent behavior of R-SETs

Abstract

The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures $T$ as small as $10^{-3} e^2/C$ (where $C$ is the junction capacitance) while the voltage gain becomes impossible at $T\agt 10^{-2}e^2/C$.