Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression
V.Kravchenko(1), N.Minina(1), A.Savin(1), C.B.Sorensen(2),, O.P.Hansen(2), W.Kraak(3) ((1)Physics Faculty, Moscow State University,, Moscow, Russia (2)Oersted Laboratory, Niels Bohr institute, Copenhagen, (3)Institute of Physics, Humboldt University, Berlin)
TL;DR
This study investigates how uniaxial compression affects hole-hole scattering in a 2D hole gas within GaAs/AlGaAs heterostructures, revealing significant suppression of scattering and increased decay time under compression.
Contribution
It demonstrates that uniaxial compression strongly suppresses hole-hole scattering in 2D hole gases, providing insights into strain effects on carrier interactions in heterostructures.
Findings
Hole-hole scattering is strongly suppressed by uniaxial compression.
Decay time of relative momentum increases 4.5 times at 1.3 kbar compression.
Resistance and magnetoresistance depend on temperature under compression.
Abstract
Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/AlGaAs heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.
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