Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

TL;DR

This paper presents an experimental study of single-electron transistors operating in a strong tunneling regime, demonstrating persistent Coulomb effects and reliable operation at high conductance levels, with results aligning well with theoretical predictions.

Contribution

It provides new experimental evidence of Coulomb blockade in high-conductance single-electron transistors and confirms theoretical models in the strong tunneling limit.

Findings

Coulomb effects persist despite strong charge fluctuations

Transistors operate reliably at conductances 3-4 times above the quantum conductance

Experimental data agrees with theoretical predictions for strong tunneling

Abstract

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.