Tunneling in very small GaAs MESFET
W. Poirier, D. Mailly, M. Sanquer
TL;DR
This paper investigates electron tunneling in very small GaAs MESFETs at low temperatures, highlighting elastic tunneling, magnetoconductance, and conductance fluctuations within a single-electron framework.
Contribution
It provides a detailed analysis of tunneling and conductance fluctuations in small GaAs MESFETs without considering Coulomb blockade effects.
Findings
Transport occurs via elastic tunneling at low temperatures.
Magnetoconductance shows positive mean magnetoconductance.
Conductance fluctuations are explained by a single-electron model.
Abstract
We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design