H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition

TL;DR

This study shows that in high-mobility silicon MOSFETs near the insulator-conductor transition, the magnetoconductivity depends on the ratio of magnetic field to temperature, highlighting the importance of electron spin in the 2D conducting phase.

Contribution

It demonstrates H/T scaling of magnetoconductance near the transition, providing constraints for theoretical models and emphasizing the role of electron spin.

Findings

Magnetoconductivity follows a universal H/T scaling form.

Electron spin is crucial to understanding the conducting phase.

Results support spin-related theories of 2D conduction.

Abstract

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $\Delta\sigma(H_{||},T)\equiv\sigma(H_{||},T)-\sigma(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions.