Interatomic Potential for Silicon Defects and Disordered Phases
Joao F. Justo (Instituto de Fisica da Universade de Sao Paulo), Martin, Z. Bazant, Efthimios Kaxiras (Department of Physics, Harvard University),, V. V. Bulatov (Department of Mechanical Engineering, MIT), and Sidney Yip, (Department of Nuclear Engineering, MIT)

TL;DR
This paper introduces a new empirical silicon potential that accurately models defects, disordered phases, and dislocations, matching ab initio results and enabling large-scale simulations at lower computational cost.
Contribution
The authors develop a novel silicon potential with improved transferability and accuracy for defects and disordered phases, outperforming existing models.
Findings
Accurately predicts dislocation core properties in agreement with ab initio calculations.
First empirical potential capable of simulating quenching from liquid to amorphous silicon.
Structural and thermodynamic properties of disordered phases match experimental and ab initio data.
Abstract
We develop an empirical potential for silicon which represents a considerable improvement over existing models in describing local bonding for bulk defects and disordered phases. The model consists of two- and three-body interactions with theoretically motivated functional forms that capture chemical and physical trends as explained in a companion paper. The numerical parameters in the functional form are obtained by fitting to a set of ab initio results from quantum mechanical calculations based on density functional theory in the local density approximation, which include various bulk phases and defect structures. We test the potential by applying it to the relaxation of point defects, core properties of partial dislocations and the structure of disordered phases, none of which are included in the fitting procedure. For dislocations, our model makes predictions in excellent agreement…
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