What Determines Inhomogeneous Line Widths in Semiconductor Microcavities?
D. M. Whittaker (Toshiba Cambridge Research Centre)
TL;DR
This paper investigates the factors influencing inhomogeneous line widths in semiconductor microcavities, revealing that disorder scattering predominantly determines line widths due to motional narrowing effects.
Contribution
It introduces a microscopic two-dimensional model to numerically analyze how disorder affects polariton line widths in microcavities, highlighting the role of disorder scattering.
Findings
Disorder scattering is the main factor in line width determination.
Motional narrowing reduces the impact of multiple scattering.
Numerical calculations support the dominance of disorder effects.
Abstract
Microcavity inhomogeneous line widths are calculated numerically using a microscopic two dimensional model of the polariton interaction with quantum well disorder. The calculations show show that in most structures the line widths are determined by disorder scattering between polariton and exciton states. This is because motional narrowing effectively removes the contribution due to multiple scattering between polariton states.
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