Doping induced metal-insulator transition in two-dimensional Hubbard, $t-U$, and extended Hubbard, $t-U-W$, models
F.F. Assaad (Univ. Stuttgart, Germany), M. Imada (ISSP. Univ., Tokyo)

TL;DR
This study numerically investigates how adding a W-dependent term to the 2D Hubbard model changes the doping-induced metal-insulator transition, revealing a transition to a d-wave superconductor.
Contribution
It demonstrates that the inclusion of the W term fundamentally alters the critical behavior of the metal-insulator transition in the 2D Hubbard model.
Findings
Localization length scales as |μ - μ_c|^{-1/2} with W
Localization length scales as |μ - μ_c|^{-1/4} in the Hubbard model
Doping leads to a d_{x^2 - y^2} superconductor with finite W
Abstract
We show numerically that the nature of the doping induced metal-insulator transition in the two-dimensional Hubbard model is radically altered by the inclusion of a term, , which depends upon a square of a single-particle nearest-neighbor hopping. This result is reached by computing the localization length, , in the insulating state. At finite values of we find results consistent with where is the critical chemical potential. In contrast, for the Hubbard model. At finite values of , the presented numerical results imply that doping the antiferromagnetic Mott insulator leads to a superconductor.
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