Magneto-Coulomb Oscillation in Ferromagnetic Single Electron Transistors
Hiroshi Shimada, Keiji Ono, Youiti Ootuka
TL;DR
This paper presents a theoretical analysis and experimental observations of magneto-Coulomb oscillations in ferromagnetic single electron transistors, highlighting the effects of magnetic fields on electron chemical potentials and device free energy.
Contribution
It introduces a theoretical model explaining magneto-Coulomb oscillations and provides experimental data on Ni/Co/Ni ferromagnetic SETs, exploring potential applications.
Findings
Magneto-Coulomb oscillations are observed in ferromagnetic SETs.
Variations in chemical potentials influence free energy changes.
Experimental results support the theoretical model.
Abstract
The mechanism of the magneto-Coulomb oscillation in ferromagnetic single electron transistors (SET's) is theoretically considered. Variations in the chemical potentials of the conduction electrons in the ferromagnetic island electrode and the ferromagnetic lead electrodes in magnetic fields cause changes in the free energy of the island electrode of the SET. Experimental results of the magneto-Coulomb oscillation in a Ni/Co/Ni ferromagnetic SET are presented and discussed. Possible applications of this phenomenon are also discussed.
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