Absence of Localization in Certain Field Effect Transistors

TL;DR

This paper reviews experimental and theoretical findings on the metal-insulator transition in two-dimensional electron systems, emphasizing the role of Coulomb interactions and spin polarization, and discusses the absence of localization effects in certain field effect transistors.

Contribution

It provides a comprehensive review of the mechanisms behind the MIT in 2DES, highlighting the influence of Coulomb interactions and spin polarization, with a focus on the absence of localization.

Findings

MIT driven by Coulomb interactions

Conductance scaling and magnetic field dependence evidence

Absence of localization effects in certain FETs

Abstract

We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B=0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.