Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure

TL;DR

This study explores how pressure influences acceptor levels and hole scattering in p-GaSe, revealing changes in ionization energies and mobility through transport measurements up to 4 GPa.

Contribution

It provides new insights into pressure-dependent acceptor ionization energies and hole scattering mechanisms in p-GaSe using transport measurements.

Findings

Ionization energies decrease with pressure due to dielectric constant increase.

Hole mobility is affected by phonon frequency and hole-phonon coupling changes.

Pressure modifies acceptor ionization and hole scattering in p-GaSe.

Abstract

The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.