Acoustoelectric Study of Interface Trapping Defects in GaAs Epitaxial Strucrures

TL;DR

This paper introduces a novel acousto-electrical technique using transient transverse acoustoelectric voltage to analyze interface trapping defects in GaAs epitaxial structures, providing a new way to characterize solid state interfaces.

Contribution

The paper presents a new transient acoustoelectric measurement method for detecting interface and bulk trapping centers in epitaxial semiconductor structures.

Findings

Transient TAV effectively characterizes trapping centers.

Spectral and temperature dependence reveal defect properties.

Method applicable to surface and interface defect analysis.

Abstract

A new acousto-electrical method making use of transient transverse acoustoelectric voltage (TAV) to study solid state structures is reported. This voltage arises after a surface acoustic wave (SAW) generating the signal is switched off. Related measurements consist in detecting the shape of transient voltage and its spectral and temperature dependence. Both theory and experiment show that this method is an effective tool to characterize trapping centers in the bulk as well as at surfaces or interfaces of epitaxial semiconductor structures.