Intrinsic surface depression of the order parameter under mixed (s+id)-wave pair symmetry and its effect on the critical current of high-Tc SIS Josephson junctions
G. A. Ummarino (a), R. S. Gonnelli (a), C. Bravi (a), V. A., Stepanov (b) ((a) INFM-Dipartimento di Fisica, Politecnico di Torino, Torino,, Italy; (b) P.N. Lebedev Physical Institute, Russian Academy of Sciences,, Moscow, Russia)

TL;DR
This paper investigates how intrinsic surface gap depression, influenced by mixed (s+id)-wave symmetry, affects the critical current in high-Tc SIS Josephson junctions, providing insights into the order parameter's nature and surface effects.
Contribution
It introduces a model considering surface gap depression under mixed (s+id)-wave symmetry and compares predictions with experimental data, highlighting the importance of surface effects in high-Tc junctions.
Findings
Good agreement with experimental IcRn data for both s-wave and d-wave symmetries.
Surface gap depression significantly reduces IcRn values from BCS expectations.
Upper limit for d-wave component in YBCO was tentatively estimated.
Abstract
An intrinsic gap depression at the Superconductor-Insulator interface due to the very short value of the coherence length in High-Tc Superconductors [HTSs] is considered, in the framework of a mixed (s+id)-wave pair symmetry for the order parameter ranging from pure s to pure d-wave. This gap depression acts as the main physical agent causing the relevant reduction of IcRn(T) values with respect to BCS expectations in HTS SIS Josephson junctions. Good agreement with various experimental data is obtained with both pure s-wave and pure d-wave symmetries of the order parameter, but with amounts of gap depression depending on the pair symmetry adopted. Regardless of the pair symmetry considered, these results prove the importance of the surface order-parameter depression in the correct interpretation of the Ic(T)Rn(T) data in HTS SIS junctions. In a case of planar YBCO-based junction the…
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