Weak Localization in Semiconductor Multi-Quantum Well Structures

TL;DR

This paper investigates how weak localization affects conductivity in semiconductor multi-quantum-well structures with weak tunneling, revealing that tunneling generally suppresses the localization effect.

Contribution

It provides a theoretical analysis of weak localization in MQW structures without miniband formation, including the calculation of tunneling effects on conductivity.

Findings

Tunneling suppresses weak localization in MQW structures.

Weak localization effects are described by coupled Dyson equations.

Conductivity is affected by tunneling in the weak localization regime.

Abstract

We have studied the phenomenon of weak localization in multi-quantum-well (MQW) structures in the regime of weak tunneling, when superlattice minibands are not formed. We have calculated the effect of weak localization on conductivity, which in this situation is described by a system of coupled Dyson equations. The tunneling across the MQW structure is found, in general, to suppress the weak localization effect on conductivity.