Dislocation Free Island Formation in Heteroepitaxial Growth: An Equilibrium Study
Istvan Daruka, Albert-Laszlo Barabasi

TL;DR
This paper presents an equilibrium model for strained heteroepitaxial systems, analyzing island formation, wetting layers, and ripening to understand growth modes and stability conditions.
Contribution
It introduces a comprehensive equilibrium phase diagram for dislocation-free island formation and wetting film growth in heteroepitaxial systems, linking theory with experimental observations.
Findings
Identifies conditions for stable island formation
Characterizes growth modes via phase diagram
Predicts effects of wetting layer thickness
Abstract
We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation free island formation, and ripening. The derived phase diagram provides a detailed characterization of the possible growth modes in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as well as ripening.
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