A Transport Analysis of the BEEM Spectroscopy of Au/Si Schottky Barriers
U. Hohenester, P. Kocevar, P.L. de Andres, F. Flores
TL;DR
This paper systematically investigates the transport properties of BEEM in Au/Si Schottky barriers, revealing compatibility with bandstructure-induced non-forward electron propagation in Au(111).
Contribution
It provides a comprehensive analysis of BEEM transport in Au/Si barriers, highlighting the role of bandstructure effects in electron propagation.
Findings
Experimental data align with bandstructure-induced non-forward electron propagation.
Transport behavior varies with metal layer thickness and temperature.
Supports theoretical predictions of non-forward electron propagation in Au(111).
Abstract
A systematic transport study of the ballistic electron emission microscopy (BEEM) of Au/Si(100) and Au/Si(111) Schottky barriers for different thicknesses of the metal layer and different temperatures is presented. It is shown that the existing experimental data are compatible with a recently predicted bandstructure-induced non-forward electron propagation through the Au(111) layer.
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Taxonomy
TopicsSemiconductor materials and interfaces · Surface and Thin Film Phenomena · Advanced Materials Characterization Techniques