A theoretical analysis of Ballistic Electron Emission Microscopy: k-space distributions and spectroscopy

TL;DR

This paper provides a theoretical analysis of BEEM experiments, focusing on k-space distributions and spectroscopy, revealing how elastic scattering influences electron beam focusing and current injection near the Schottky barrier.

Contribution

It introduces a theoretical framework for analyzing BEEM currents through reciprocal space calculations, emphasizing elastic scattering effects at low temperatures and voltages.

Findings

Elastic scattering causes focused electron beams and narrow lines in real space.

The model explains similarities in BEEM currents for different silicon orientations.

Focalization of injected electrons is significant near the Schottky barrier threshold.

Abstract

We analyze BEEM experiments. At low temperatures and low voltages, near the threshold value of the Schottky barrier, the BEEM current is dominated by the elastic component. Elastic scattering by the lattice results in the formation of focused beams and narrow lines in real space. To obtain the current injected in the semiconductor, we compute the current distribution in reciprocal space and, assuming energy and $k_{\parallel}$ conservation. Our results show an important focalization of the injected electron beam and explain the similarity between BEEM currents for Au/Si(111) and Au/Si(100).