A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces

TL;DR

This study investigates how Nitrogen and Boron doping influence the growth mechanisms of CVD diamond (100):H 2 X 1 surfaces, revealing that Boron catalyzes growth via the Harris mechanism, while Nitrogen suggests an alternative process.

Contribution

First calculations examining N and B doping effects on CVD diamond growth mechanisms, challenging existing models and proposing new insights into doping-specific growth behaviors.

Findings

Boron doping catalyzes growth via Harris mechanism

Nitrogen doping indicates an alternative growth mechanism

Results align with recent experimental observations

Abstract

We present a study of the effects of Nitrogen and Boron doping on the growth of CVD diamond in the (100) mechanism. These are the first calculations of this type and show that, in accordance with recent experimental results, the presently accepted growth mechanism, that due to Harris, is cataylsed by the presence of subsurface Boron impurities. In contrast, we find that the Harris Mechanism cannot explain growth in the presence of subsurface N and suggest an alternative mechanism.