Enhanced shot noise in resonant tunneling: theory and experiment

TL;DR

This paper investigates the phenomenon of enhanced shot noise in resonant tunneling diodes, combining experimental measurements and theoretical modeling to explain how electron-electron interactions and density of states shape influence noise levels.

Contribution

It introduces a comprehensive theory explaining shot noise enhancement in resonant tunneling diodes, validated by experimental data showing significant Fano factor increases due to Coulomb interactions.

Findings

Fano factor up to 6.6 observed experimentally

Enhanced shot noise caused by electron-electron Coulomb interactions

Theoretical model agrees with experimental results

Abstract

We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up to 6.6, and show that it is a dramatic effect caused by electron-electron interaction through Coulomb force, enhanced by the particular shape of the density of states in the well. We also present numerical results from the proposed theory, which are in agreement with the experiment, demonstrating that the model accounts for the relevant physics involved in the phenomenon.