Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

TL;DR

This study investigates how a tilted magnetic field affects the anomalous zero-field conducting phase in high-mobility silicon MOSFETs, revealing that suppression depends solely on electron spin rather than field orientation.

Contribution

It demonstrates that the suppression of the anomalous conducting phase is independent of magnetic field angle and is primarily related to electron spin effects.

Findings

Suppression of the phase is independent of field angle.

Behavior resembles disordered GaAs/AlGaAs heterostructures.

Phase suppression is linked to electron spin.

Abstract

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.