Energetic and spatial bonding properties from angular distributions of ultraviolet photoelectrons: application to the GaAs(110) surface
C. Solterbeck, W. Schattke, J.-W. Zahlmann-Nowitzki, K.-U. Gawlik, L., Kipp, M. Skibowski, C. S. Fadley, and M. A. Van Hove

TL;DR
This paper combines angle-resolved ultraviolet photoemission spectra with theoretical calculations to map the electronic structure and bonding properties of the GaAs(110) surface, revealing energy-dependent electron localization.
Contribution
It introduces a combined experimental and theoretical approach to interpret photoemission spectra, providing detailed insights into surface electronic structure and bonding.
Findings
Excellent agreement between calculations and experimental data
Mapping of surface band dispersion and electronic structure
Identification of energy-dependent electron localization
Abstract
Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spatial properties of the contributing states. One-step calculations are in excellent agreement with new azimuthal experimental data for GaAs(110). Strong variations caused by the dispersion of the surface bands permit an accurate mapping of the electronic structure. The delocalization of the valence states is discussed analogous to photoelectron diffraction. The spatial origin of the electrons is determined, and found to be strongly energy dependent, with uv excitation probing the bonding region.
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