Experimental studies of T--shaped quantum dot transistors: phase-coherent electron transport

TL;DR

This paper investigates phase-coherent electron transport in T-shaped quantum dot transistors through low-temperature measurements, revealing oscillations and resonance effects indicative of ballistic regime behavior and electron-electron interactions.

Contribution

It provides experimental evidence of phase-coherent transport phenomena in T-shaped quantum dots and models electron scattering effects causing phase-breaking.

Findings

Observation of superimposed oscillations on conductance steps

Resonance effects consistent with phase-coherent transport

Electron-electron scattering contributes to phase-breaking

Abstract

We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives rise to electron phase-breaking in our system.