Low temperature STM on InAs (110) accumulation surfaces
L. Canali, J.W.G. Wildoer, O. Kerkhof, and L.P. Kouwenhoven
TL;DR
This study uses low-temperature STM and spectroscopy to analyze InAs (110) surfaces, revealing 2D subbands and Landau quantization, and introduces a sulphur passivation technique to form an accumulation layer.
Contribution
It presents a new ex-situ sulphur passivation method and detailed STM spectroscopy revealing quantum effects on InAs (110) surfaces.
Findings
Identification of 2D subbands in the accumulation layer
Observation of Landau quantization in high magnetic fields
Development of a sulphur passivation technique
Abstract
The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and the 3D bulk conduction band.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Surface and Thin Film Phenomena