Quantized Conductance of One-Dimensional Doped Mott Insulator

TL;DR

This paper investigates how quantized conductance in one-dimensional doped Mott insulators is affected by temperature, doping, and Umklapp scattering, revealing conditions under which conductance remains quantized or is renormalized.

Contribution

It provides a theoretical analysis of conductance quantization in doped Mott insulators considering Umklapp scattering effects at finite temperatures.

Findings

At zero temperature and away from half-filling, conductance remains quantized at 2e^2/h.

Finite temperatures and specific gate voltages can lead to deviations from perfect conductance quantization.

Umklapp scattering does not renormalize conductance at T=0 away from half-filling.

Abstract

The possible modification of quantized conductance of one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov-Stone and Ponomarenko. At T=0 and away from half-filling, the conductance is quantized as $g=2e^2/h$ and there is no renormalization by Umklapp scattering process. At finite temperatures, however, the quantization is affected depending on the gate voltage and temperature.