Valley Phase Transition in Si MOSFETs

TL;DR

This paper reviews the concept of valley phase transition in Si MOSFETs and discusses recent experimental evidence linking it to metal-insulator transitions, highlighting its significance in understanding electronic properties.

Contribution

It connects experimental observations of metal-insulator transition in Si MOSFETs with the theoretical framework of valley phase transition, emphasizing its relevance.

Findings

Experimental evidence supports valley phase transition as a mechanism for metal-insulator transition.

Valley phase transition is a plausible explanation for observed electronic behavior in Si MOSFETs.

Literature review consolidates past and recent findings on valley phenomena.

Abstract

We draw attention to the past literature on valley phase transition in Si(100) MOSFETs. The recent experiments performed by Kravchenko and co-workers indicating metal-insulator transition in Si MOSFETs are also in accord with the valley phase transition mechanism.