Opto-electronic application of AgInSe_2
D. K. Shukla, Manohar Lal, Navdeep Goyal (CAS in Physics, P U, Chandigarh, India)

TL;DR
This study explores AgInSe_2's potential for opto-electronic switching by analyzing its conductance and capacitance responses under various frequencies, temperatures, and illumination levels, revealing rapid switching capabilities.
Contribution
The paper demonstrates the application of AgInSe_2 in opto-electronic switching and characterizes its dynamic response over a wide frequency and temperature range.
Findings
Capacitance and conductance increase under illumination.
Switching time is in the microsecond range.
Switching speed improves with higher illumination and temperature.
Abstract
The paper reports a possible application of AgInSe_2 for opto-electronic switching. Material has been studied over a wide range of frequencies (5Hz to 1MHz), through measurements of conductance and capacitance, at different temperatures and illumination levels. The results indicate that there is an increase in capacitance (C) as well as conductance (G), when sample is exposed to light radiations at a given temperature. The switching/recovery time has been analyzed in terms of time constant (\tau = C/G) and found to be of the order of micro seconds for this material. It has been further observed that \tau decreases with increasing illumination levels and temperature. It is understandable, because higher the rate of recombination of optically/thermally generated carriers, lesser should be the value of \tau.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides
