Novel non-local behaviour of quasi-3D Wide Quantum Wells

TL;DR

This paper explores the unique non-local electronic behavior in wide quantum wells under high magnetic fields, revealing how multiple valley contributions can induce edge channel effects even in quasi-3D regimes.

Contribution

It introduces a modified Landauer-Buettiker formalism to describe multi-valley systems and derives a simplified model for systems with varying dissipation levels.

Findings

Parallel valley contributions cause non-local edge channel behavior.

A unified formalism describes multi-valley wide quantum wells.

Simplified resistor network model captures dissipation effects.

Abstract

We investigate the high magnetic field regime of wide quantum wells (WQW) for the case of a many valley host semiconductor. The complete system is described within a modified Landauer-Buettiker formalism and we demonstrate that a parallel contribution of two electron systems in different valleys of the band structure can lead to an edge channel related non-local behaviour even in the 3D-regime. From the obtained general result we derive also a simplified model which applies for the case of much different dissipation. It represents the most dissipative system by an Ohmic resistor network and the less dissipative system by an EC-system.