Island Density in Homoepitaxial Growth:Improved Monte Carlo Results
H. Jeong, B. Kahng, D.E. Wolf

TL;DR
This paper improves the understanding of island density in homoepitaxial growth by using a refined Monte Carlo simulation method, showing better agreement with theoretical predictions.
Contribution
It demonstrates that using random sequential updating in Monte Carlo simulations yields more accurate island density results compared to parallel updating.
Findings
Power law dependence matches theory better with sequential updating
Sequential updating improves simulation accuracy
Results support theoretical models of island density
Abstract
We reexamine the density of two dimensional islands in the submonolayer regime of a homoepitaxially growing surface using the coarse grained Monte Carlo simulation with random sequential updating rather than parallel updating. It turns out that the power law dependence of the density of islands on the deposition rate agrees much better with the theoretical prediction than previous data obtained by other methods if random sequential instead of parallel updating is used.
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