Comment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''

TL;DR

This paper discusses evidence for a two-dimensional metal-insulator transition (MIT) in a low-disorder system, supporting the idea that electron-electron interactions drive the transition observed in Si-based devices.

Contribution

It provides experimental evidence of a 2D MIT in a low-disorder structure, strengthening the case for electron-electron interactions as the cause.

Findings

MIT occurs at similar electron densities in low- and high-disorder samples

Transition is observed at lower disorder levels than previously reported

Supports the interaction-driven theory of 2D MIT

Abstract

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $\sigma_{c}\sim e^{2}/2h$. We present evidence for a 2D MIT in a structure where the disorderis about two orders of magnitude weaker than in Si MOSFETs. The MIT occurs in the same range of $n_s$ Providing very strong evidence that the 2D MIT in Si-based devices is caused by electron-electron interactions.