Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field

TL;DR

This study investigates how a parallel magnetic field affects the two-dimensional metallic phase in high mobility Si-MOS structures, revealing suppression of metallicity and distinct magnetoresistance behaviors linked to quantum corrections.

Contribution

It provides new insights into the magnetic suppression of the 2D metallic phase and identifies three types of magnetoresistance related to quantum effects.

Findings

Magnetic field suppresses the metallic state, increasing resistivity by over 30 times.

Three distinct magnetoresistance types are observed, linked to quantum corrections.

The metallic state's origin involves both spin and Coulomb interactions.

Abstract

We report on magnetotransport studies of the unusual two-dimensional metallic phase in high mobility Si-MOS structures. We have observed that the magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times. Over the total existence range of the metallic state, we have found three distinct types of the magnetoresistance, related to the corresponding quantum corrections to the conductivity. Our data suggest that the unusual metallic state is a consequence of both spin- and Coulomb-interaction effects.