On the Origin of the Metal-Insulator Transition in 2D

TL;DR

This paper proposes a model based on spin-orbit interaction to explain the observed metal-insulator transition in two-dimensional systems, accounting for enhanced metallic conduction and scaling behavior in high-mobility Si MOS structures.

Contribution

It introduces a new theoretical model that explains experimental observations of the 2D metal-insulator transition, challenging existing one-parameter scaling theory.

Findings

Model explains the enhancement of metallic conduction at low temperatures.

Model accounts for the scaling behavior of resistivity with temperature and electric field.

Provides quantitative agreement with experimental data.

Abstract

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we present a model that explains both effects in the framework of the spin-orbit interaction and provides a quantitative agreement with the experimental data.