Nonlinear dislocation dynamics and crystal sonoluminescence

TL;DR

This paper investigates the mechanisms behind sonoluminescence in ionic semiconductors, focusing on threshold phenomena like defect creation and ultrasound attenuation, through a model linking dislocation dynamics to light emission.

Contribution

It introduces a novel model connecting dislocation motion with sonoluminescence excitation and defect generation in ionic semiconductors.

Findings

Dislocation motion influences sonoluminescence thresholds.

Point defect creation correlates with nonlinear ultrasound attenuation.

Parameters of crystal relief affect dislocation dynamics.

Abstract

The sonoluminescence of ionic semiconductors were studied. The main attention is paid to threshold phenomena which accompany the light irradiation, namely --- point defect creation and nonlinear ultrasound wave attenuation. The model for description of processes under investigation which connects the sonoluminescence excitation with the onset of point defects (vacancies and intersticials) generation by moving under ultrasound action screw dislocation with a jog. The attempt is made to estimate the parameters of crystals which define the jog motion in its cristal relief.