The metal-insulator transition in Si:X: Anomalous response to a magnetic field

TL;DR

This paper investigates the magnetoconductivity of doped silicon near the metal-insulator transition, revealing a universal scaling behavior and anomalously weak magnetic field response across different doped semiconductors.

Contribution

It identifies a universal scaling law for magnetoconductivity in doped silicon and highlights a common anomalous magnetic response in uncompensated doped semiconductors.

Findings

Magnetoconductivity scales with magnetic field and dopant concentration.

Unusually large magnetic field crossover exponents near 2.

Weak magnetic response may be a common feature of doped semiconductors.

Abstract

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.