Dynamical mean-field studies of metal-insulator transitions
V. Dobrosavljevic, G. Kotliar
TL;DR
This paper reviews the dynamical mean-field approach to understanding metal-insulator transitions, including extensions to disordered systems, providing new insights into doped semiconductors.
Contribution
It introduces a generalized DMF method that incorporates both strong correlations and Anderson localization effects.
Findings
Enhanced understanding of doped semiconductors
Generalized DMF equations for disordered systems
Insights into metal-insulator transition mechanisms
Abstract
We discuss the successes of the dynamical mean field (DMF) approach to metal insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.
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