Amorphous indium phosphide from first principles
Laurent J. Lewis (1,2), Alessandro De Vita (1), and Roberto Car (1),, ((1) Institut Romand de Recherche Numerique en Physique des Materiaux, (IRRMA), EPFL, Lausanne (2) Permanent address: Departement de Physique et, GCM, Universite de Montreal)

TL;DR
This study uses first-principles molecular dynamics to analyze the structure and electronic properties of amorphous InP, revealing chemical order, defects, and the unlikelihood of pressure-induced amorphization.
Contribution
It provides detailed atomic-level insights into amorphous InP's structure, defects, and stability, based on first-principles simulations.
Findings
Amorphous InP is chemically ordered despite defects.
About 8% of bonds are 'wrong bonds' due to coordination defects.
Pressure-induced amorphization of InP is energetically unfavorable.
Abstract
We report detailed and extensive first-principles molecular-dynamics (MD) simulations of the structure and electronic properties of amorphous InP produced by rapid quenching from the liquid. The structure of the material is found to be strongly ordered chemically, even though there is a significant number of coordination defects and despite the presence of odd-membered rings. We find, as a consequence, that there exists ``wrong bonds'' in the system, in an amount of about 8%; these result from the presence of coordination defects, not of local composition fluctuations, as has been conjectured. The system, in fact, is found to be over-coordinated, which might be the reason for the observed higher density of a-InP compared to c-InP. We have also investigated the possibility of pressure-amorphizing InP. Our calculations indicate that the cost of a transformation of the compressed…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
