Dynamic Scaling in Epitaxial Growth
S. Das Sarma
TL;DR
This paper reviews the current theoretical understanding of dynamic scaling phenomena in nonequilibrium interface growth, particularly in molecular beam epitaxy (MBE) under ultrahigh vacuum conditions.
Contribution
It provides a comprehensive overview of the theoretical models and concepts related to dynamic scaling in epitaxial growth.
Findings
Summarizes key theoretical frameworks
Highlights recent advances in understanding scaling behavior
Identifies open questions in the field
Abstract
A review is provided of our current theoretical understanding of dynamic scaling in nonequilibrium interface growth as, for example, in MBE growth under ultrahigh vacuum deposition conditions.
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Taxonomy
TopicsTheoretical and Computational Physics · Electronic and Structural Properties of Oxides · Solidification and crystal growth phenomena