The influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach

TL;DR

This paper presents a semiphenomenological method to calculate the electronic transport properties of heavy-fermion systems, incorporating crystal-field effects, and successfully reproduces key experimental features.

Contribution

It introduces a novel approach combining lattice non-crossing approximation with crystal-field effects to model transport properties in heavy-fermion systems.

Findings

Qualitative agreement with experimental resistivity data

Reproduction of magnetoresistivity behavior

Accurate thermoelectric power predictions

Abstract

The electronic transport properties of heavy-fermion systems were calculated based on a semiphenomenological approach to the lattice non-crossing approximation in the limit of infinite local correlations augmented by crystal-field effects. Within the scope of this calculation using the linearized Boltzmann theory in the relaxation time approximation the qualitative features of the temperature-dependent resistivity, the magnetoresistivity and the thermoelectric power can be successfully reproduced; this is exemplified by a comparison with experimental results on CeCu_2Si_2.