Tunneling into the edge of a compressible Quantum Hall state
A. V. Shytov (1), L. S. Levitov (1), B. I. Halperin (2) ((1) MIT,, (2) Harvard University)

TL;DR
This paper develops a composite fermion theory to analyze tunneling into the edge of a compressible quantum Hall state, revealing non-ohmic conductance and a filling factor-dependent tunneling exponent.
Contribution
It introduces a new theoretical framework for tunneling in compressible quantum Hall states, connecting with existing chiral Luttinger liquid models at fractional fillings.
Findings
Tunneling conductance is non-ohmic due to slow relaxation effects.
The tunneling exponent varies continuously with filling factor nu.
Results agree with established theories at fractional quantum Hall states.
Abstract
We present a composite fermion theory of tunneling into the edge of a compressible quantum Hall system. The tunneling conductance is non-ohmic, due to slow relaxation of electromagnetic and Chern-Simons field disturbances caused by the tunneling electron. Universal results are obtained in the limit of a large number of channels involved in the relaxation. The tunneling exponent is found to be a continuous function of the filling factor nu, with a a slope that is discontinuous at nu=1/2 in the limit of vanishing bulk resistivity rho_xx. When nu corresponds to a principal fractional quantized Hall state, our results agree with the chiral Luttinger liquid theories of Wen, and Kane, Fisher and Polchinski.
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