Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells

TL;DR

This paper introduces a detailed microscopic model for vertical sequential tunneling in semiconductor multiple quantum wells, accounting for Coulomb interactions, contact effects, and electric field domain formation, providing insights into multistability phenomena.

Contribution

It presents a selfconsistent microscopic model that incorporates Coulomb interactions and contact effects for analyzing tunneling in quantum well structures, including phase diagrams of solution regimes.

Findings

Electric field domains form in the structures.

Multistability arises from Coulomb interactions.

Phase diagrams identify parameter regions with different solutions.

Abstract

We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats the Coulomb interaction within a mean field approximation. We analyze the current density through a double well and a superlattice and study the formation of electric field domains and multistability coming from the Coulomb interaction. Phase diagrams of parameter regions (bias, doping in the heterostructure and in the contacts,etc) where the different solutions exist are given.