Impurity bands and sequential resonant tunneling in the presence of terahertz fields

TL;DR

This paper combines theoretical and experimental approaches to investigate how impurity bands influence electronic transport in low doped quantum wells under terahertz fields, providing a comprehensive model that matches experimental data.

Contribution

It introduces a self-contained model that accurately describes impurity band effects and resonant tunneling in quantum wells under terahertz irradiation, using only nominal sample parameters.

Findings

Impurity bands are crucial for understanding transport in quantum wells.

The model quantitatively matches experimental results across various conditions.

Terahertz fields significantly affect resonant tunneling behavior.

Abstract

A theoretical and experimental study of transport in a low doped multiple quantum well structure shows that impurity bands are essential in understanding the electronic transport both with and without terahertz irradiation. A full self-contained model, which involves only the nominal parameters of the sample, agrees quantitatively with a wide range of experiments.