Reflection symmetry at a B=0 metal-insulator transition in two dimensions
D. Simonian, S. V. Kravchenko, and M. P. Sarachik (City College of the, City University of New York)
TL;DR
This paper uncovers a symmetry between resistivity and conductivity on either side of the B=0 metal-insulator transition in a 2D electron gas, suggesting related transport mechanisms.
Contribution
It reveals a novel symmetry at the B=0 transition in 2D systems, linking transport properties across the transition.
Findings
Resistivity and conductivity are symmetric across the transition.
Transport mechanisms on both sides are related.
Symmetry provides new insights into 2D metal-insulator transitions.
Abstract
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport mechanisms on the two sides are related.
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