Gauge drag between half-filled Landau levels

TL;DR

This paper predicts that the transresistance between composite fermions in double-layer half-filled Landau levels exhibits a distinctive $T^{4/3}$ temperature dependence due to gauge field fluctuations, providing a potential experimental signature.

Contribution

It introduces a theoretical model linking gauge field fluctuations to transresistance behavior in double-layer Landau levels, highlighting a specific temperature dependence as evidence.

Findings

Transresistance dominated by gauge field fluctuations.

Transresistance proportional to $T^{4/3}$ below a critical temperature.

$T^{4/3}$ dependence as an experimental signature.

Abstract

The transresistance (i.e. the voltage induced in one layer by a current in another) between composite fermions in double-layers of half-filled Landau levels is shown to be dominated by scattering due to singular gauge field fluctuations arising from the antisymmetric combination of density fluctuations in two layers. The drag rate is found to be proportional to $T^{4/3}$ for $T$ less than an energy scale $\Omega_{cr}$ which depends on the spacing, $d$, between the layers. An observation of a $T^{4/3}$ temperature dependence in the transresistance would be a strong evidence for the existence of the gauge field fluctuations.