Far-infrared and capacitance spectroscopy of self-assembled InAs quantum dots
A. Lorke, M. Fricke, B. T. Miller, M. Haslinger, J. P. Kotthaus, G., Medeiros-Ribeiro, P. M. Petroff

TL;DR
This paper reviews recent experimental techniques, including far-infrared and capacitance spectroscopy, used to study the electronic states and interactions in self-assembled InAs quantum dots, providing insights into their many-particle spectra.
Contribution
It presents a comprehensive review of experimental methods and findings related to the electronic properties and interactions in InAs quantum dots.
Findings
Electron-electron interactions significantly influence the ground state.
Spectroscopy techniques reveal detailed many-particle spectra.
Experimental approaches enable probing of quantum dot excitations.
Abstract
We review a number of recent experiments which are probing ground state and excitations of few-electron systems in self-assembled InAs quantum dots. Far-infrared spectroscopy, together with local as well as large-scale capacitive probing allows for a detailed investigation of the different contributions to the many-particle spectrum in the dots. The influence of electron--electron interactions on the ground state and the excitations is discussed.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
