Electronic Spectra of Porous Silicon near Fermi Level

TL;DR

This study investigates the electronic spectra of porous silicon near the Fermi level, examining how oxygenation and thermal treatments affect the density of states and photoluminescence properties.

Contribution

It provides new insights into the fine structure of photoelectron spectra of porous silicon after oxygenation and thermal treatments.

Findings

Fine structure observed in photoelectron spectra after oxygen heating at 600 K

DOS significance in photoluminescence and its degradation discussed

Spectra analyzed in the energy region below 4 eV from Fermi level

Abstract

Electronic spectra of porous Si have been investigated in the region $<$4 eV below the Fermi level with specimens subjected to in situ oxygenation and thermal treatments. The significance of DOS to the photoluminescence and its degradation in porous Si is discussed. Fine structure of the photoelectron spectra is found from specimens heated in oxygen at 600 K.