Inter-layer Edge Tunneling and Transport Properties in Double-Layer Quantum Hall Systems
D. Yoshioka, A.H. MacDonald

TL;DR
This paper develops a theoretical model for transport in double-layer quantum Hall systems, focusing on how inter-layer tunneling affects resistances and is influenced by edge alignment and magnetic field orientation.
Contribution
It introduces a comprehensive theory linking inter-layer tunneling to transport properties and compares predictions with recent experimental data.
Findings
Inter-layer tunneling significantly influences transport resistances.
Edge misalignment and magnetic field tilt modify tunneling amplitudes.
Theoretical results align with recent experimental observations.
Abstract
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences transport properties through the resulting influence on steady-state distribution functions. Resistences for various configurations of the electrodes are calculated as a function of the inter-layer tunneling amplitude. The effect of misalignment of the edges of the two layers and the effect of tilting the magnetic field away from the normal to the layers on the inter- layer tunneling amplitude near the sample edges are investigated. The results obtained in this work is consistent with recent experiments.
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Taxonomy
TopicsQuantum and electron transport phenomena · Surface and Thin Film Phenomena · Advanced Physical and Chemical Molecular Interactions
