Statistics of Mesoscopic Fluctuations of Quantum Capacitance

TL;DR

This paper re-analyses the relationship between quantum capacitance and level spacing in mesoscopic systems, linking it to Random Matrix Theory and discussing its quantum-resistive origin and observability.

Contribution

It establishes a direct relation between quantum capacitance statistics and level spacing, extending the Thouless formula to include quantum capacitance analysis.

Findings

Quantum capacitance is inversely proportional to level spacing.

Statistics of quantum capacitance follow Random Matrix Theory predictions.

Quantum-resistive origin of capacitance can be intrinsic and observable.

Abstract

The Thouless formula \(G = (e^2/h)(E_c/\Delta)\) for the two-probe dc conductance $G$ of a d-dimensional mesoscopic cube is re-analysed to relate its quantum capacitance $C_Q$ to the reciprocal of the level spacing $\Delta$. To this end, the escape time-scale $\tau$ occurring in the Thouless correlation energy \(E_c = \hbar/\tau\) is interpreted as the {\em time constant} \(\tau = RC_Q\) with $RG \equiv$ 1, giving at once \(C_Q = (e^2/2\pi \Delta)\). Thus, the statistics of the quantum capacitance is directly related to that of the level spacing, which is well known from the Random Matrix Theory for all the three universality classes of statistical ensembles. The basic questions of how intrinsic this quantum capacitance can arise purely quantum-resistively, and of its observability {\em vis-a-vis} the external geometric capacitance that combines with it in series, are discussed.