A Field Effect Transitor based on the Mott Transition in a Molecular Layer

TL;DR

This paper proposes a novel FET-like device utilizing the Mott transition in organic molecular layers, demonstrating potential for nanoscale applications with distinct impedance states.

Contribution

It introduces a Mott transition-based FET device concept using organic charge transfer complexes, a new approach in electronic switching technology.

Findings

Device exhibits FET-like switching behavior

Operates effectively at nanoscale dimensions

Proposed implementation with organic complexes

Abstract

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.